Title :
Integrated AlGaAs two-beam LD-PD array fabricated by reactive ion beam etching
Author :
Uchida, M. ; Matsumoto, Shinichi ; Asakawa, K. ; Kawano, Hiroyuki
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Monolitically integrated AlGaAs two-beam laser diode (LD)- photodiode (PD) arrays are described. LDs and PDs have etched facets fabricated by reactive ion beam etching (RIBE). LDs in the array exhibit threshold currents as low as 18 mA and external quantum efficiencies of more than 30% per facet. A PD can detect more than 20% of a light beam emitted from an LD facing it. Crosstalk between the two LD-PD columns (separated by 50 ¿m), on the other hand, is suppressed to less than ¿20 dB by an AlGaAs optical barrier (5 ¿m thick) fabricated between them.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; photodiodes; semiconductor junction lasers; sputter etching; AlGaAs; AlGaAs optical barrier; RIBE; crosstalk; etched facets; external quantum efficiencies; monolithically integrated arrays; reactive ion beam etching; threshold currents; two-beam laser diode-photodiode array;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860398
