Title :
Characteristics of GaAs guard-ring, diodes
fDate :
11/1/1964 12:00:00 AM
Keywords :
Diodes; Electrons; Etching; Gallium arsenide; Linearity; Radiative recombination; Silicon; Solid state circuits; Spontaneous emission; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15432
