The effect of deep levels due to copper on the optical and electrical properties of GaAs p-n junctions

Author

Pilkuhn, M. ; Rupprecht, H.

Volume

Issue

fYear

1964

fDate

11/1/1964 12:00:00 AM

Firstpage

537

Lastpage

537

Keywords

Alloying; Copper; Current measurement; Current-voltage characteristics; Diodes; Gallium arsenide; Impurities; P-n junctions; Tin; Zinc;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1964.15434

Filename

1473822

Link To Document