Title :
C-band side-entry ge quantum-well electroabsorption modulator on SOIi operating at 1 V swing
Author :
Roth, J.E. ; Fidaner, O. ; Edwards, E.H. ; Schaevitz, R.K. ; Kuo, Y.-H. ; Herman, N.C. ; Kamins, T.I. ; Harris, J.S. ; Miller, D.A.B.
Author_Institution :
Stanford Univ., Stanford
Abstract :
An electroabsorption modulator using a side-entry architecture achieved a contrast ratio exceeding 3 dB over a 3.5 nm range in the C-band, using a voltage swing of 1 V and operating at 100degC. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown on silicon-on-insulator (SOI) wafers. The device exploits an asymmetric Fabry-Perot resonator formed between the totally internally reflecting air-SiGe interface and a frustrated total internal reflection from the buried oxide layer of the SOI substrate.
Keywords :
Fabry-Perot resonators; Ge-Si alloys; buried layers; electro-optical modulation; electroabsorption; epitaxial growth; germanium; quantum confined Stark effect; semiconductor quantum wells; silicon-on-insulator; Fabry-Perot resonator; Ge quantum-well electroabsorption modulator; Ge-SiGe; Ge/SiGe quantum wells; SOI substrate; SOI wafers; air-SiGe interface; buried oxide layer; epitaxial growth; quantum-confined Stark effect; side-entry architecture; silicon-on-insulator wafers; temperature 100 C; total internal reflection; voltage 1 V; wavelength 3.5 nm; Modulation; Optical device fabrication; Optical modulation; Optical reflection; Silicon; Silicon germanium; Substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082979
