An accurate nonlinear MOSFET model for intermodulation distortion analysis

A compact charge-conservative nonlinear equivalent circuit model for metal-oxide-semiconductor field-effect transistors is comprehensively verified in terms of its ability to predict intermodulation distortion. The model is valid for the dc, small-signal, and large-signal simulation of high frequency circuits over a wide range of bias conditions and is globally fully continuous. Simulations made using the model, following parameter extraction, are validated by comparisons with experimental data. Using harmonic balance methods, intermodulation distortion for weak and large-signal two-tone tests and more realistic wide-band code-division-multiple-access signals is successfully predicted for a range of bias points.