Title :
Backside thinned CMOS imagers with high broadband quantum efficiency realised using new integration process
Author :
Munck, K. De ; Bogaerts, J. ; Tezcan, D.S. ; Moor, P. De ; Sedky, S. ; Hoof, C. Van
Author_Institution :
KU Leuven, Leuven
Abstract :
Thinned backside illuminated CMOS imagers were developed, having a thick epitaxial layer with a graded doping concentration. All thin wafer processing is performed on 200 mm wafers using a specially developed temporary carrier process. Following appropriate backside treatment, high quantum efficiency above 80% between 400 and 870 nm was obtained, in agreement with simulation.
Keywords :
CMOS image sensors; semiconductor epitaxial layers; wafer-scale integration; backside thinned CMOS imagers; broadband quantum efficiency; integration process; size 200 mm; thick epitaxial layer; thin wafer processing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082812
