• DocumentCode
    1023334
  • Title

    Backside thinned CMOS imagers with high broadband quantum efficiency realised using new integration process

  • Author

    Munck, K. De ; Bogaerts, J. ; Tezcan, D.S. ; Moor, P. De ; Sedky, S. ; Hoof, C. Van

  • Author_Institution
    KU Leuven, Leuven
  • Volume
    44
  • Issue
    1
  • fYear
    2008
  • Firstpage
    50
  • Lastpage
    52
  • Abstract
    Thinned backside illuminated CMOS imagers were developed, having a thick epitaxial layer with a graded doping concentration. All thin wafer processing is performed on 200 mm wafers using a specially developed temporary carrier process. Following appropriate backside treatment, high quantum efficiency above 80% between 400 and 870 nm was obtained, in agreement with simulation.
  • Keywords
    CMOS image sensors; semiconductor epitaxial layers; wafer-scale integration; backside thinned CMOS imagers; broadband quantum efficiency; integration process; size 200 mm; thick epitaxial layer; thin wafer processing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082812
  • Filename
    4415025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023334