Title :
Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers
Author :
Huang, W.-K. ; Liu, Y.-C. ; Hsin, Y.-M.
Author_Institution :
Nat. Central Univ., Jhongli
Abstract :
The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8 GHz and 5 Gbit/s eye diagram.
Keywords :
CMOS integrated circuits; bandwidth allocation; elemental semiconductors; photodiodes; pulse measurement; silicon; CMOS technology; bandwidth 2.8 GHz; bandwidth enhancement; bit rate 5 Gbit/s; electrical bandwidth; eye diagram; photodiode fabrication; pulse measurement; slow diffusion photocarrier elimination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082484
