Title :
Novel technique for deposition of hydrogenated amorphous silicon thin films
Author :
Robertson, P.A. ; Milne, W.I.
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
Abstract :
Amorphous silicon films have been deposited from the direct photoenhanced decomposition of monosilane. The use of a hydrogen discharge lamp within the reaction vessel obviates the need for mercury sensitisation. High deposition rates and material properties comparable to those or conventional plasma-enhanced CVD films have been achieved.
Keywords :
amorphous semiconductors; semiconductor growth; semiconductor thin films; silicon; H2 discharge lamp; UV lamp; a-Si:H thin film deposition; deposition rates; direct photoenhanced decomposition; material properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860410
