• DocumentCode
    1023428
  • Title

    Bipolar transistor action in cadmium mercury telluride

  • Author

    Ashley, T. ; Crimes, G. ; Elliott, C.T. ; Harker, A.T.

  • Author_Institution
    Royal Signals & Radar Establishment, Malvern, UK
  • Volume
    22
  • Issue
    11
  • fYear
    1986
  • Firstpage
    611
  • Lastpage
    613
  • Abstract
    Bipolar transistor action has been observed in a cadmium mercury telluride, lateral collection npn device structure. The current gain ß is strongly dependent on collector current. Values up to 100 and 58 have been observed at 80 K and 19 K, respectively.
  • Keywords
    II-VI semiconductors; bipolar transistors; cadmium compounds; mercury compounds; CMT; CdHgTe; characteristics; current gain; lateral collection n p n device structure; npn bipolar transistor HgCdTe; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860416
  • Filename
    4256613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023428