Title :
Bipolar transistor action in cadmium mercury telluride
Author :
Ashley, T. ; Crimes, G. ; Elliott, C.T. ; Harker, A.T.
Author_Institution :
Royal Signals & Radar Establishment, Malvern, UK
Abstract :
Bipolar transistor action has been observed in a cadmium mercury telluride, lateral collection npn device structure. The current gain ß is strongly dependent on collector current. Values up to 100 and 58 have been observed at 80 K and 19 K, respectively.
Keywords :
II-VI semiconductors; bipolar transistors; cadmium compounds; mercury compounds; CMT; CdHgTe; characteristics; current gain; lateral collection n p n device structure; npn bipolar transistor HgCdTe; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860416
