DocumentCode :
1023429
Title :
Quantization of dielectric flux in phase-quantum-tunnel junction
Author :
Yoshikawa, N. ; Tayama, M. ; Akeyoshi, T. ; Kojima, M. ; Sugahara, M.
Author_Institution :
Yokohama National University, Yokohama, Japan
Volume :
23
Issue :
2
fYear :
1987
fDate :
3/1/1987 12:00:00 AM
Firstpage :
1130
Lastpage :
1133
Abstract :
The electrical properties of relatively long bridges made of very thin NbN film were investigated experimentally. When the bridge resistance 
the I-V characteristic showed the possibility of quantization of dielectric flux inside the bridge. On the other hand, highly resistive bridges ( 
KΩ) revealed a step structure in the IV relation when irradiated by electromagnetic waves. Since the current interval of the steps is proportional to the frequency of the wave, these bridges are thought to behave as phase-quantum-tunnel devices with properties dual to those of Josephson junctions.
the I-V characteristic showed the possibility of quantization of dielectric flux inside the bridge. On the other hand, highly resistive bridges ( KΩ) revealed a step structure in the IV relation when irradiated by electromagnetic waves. Since the current interval of the steps is proportional to the frequency of the wave, these bridges are thought to behave as phase-quantum-tunnel devices with properties dual to those of Josephson junctions.Keywords :
Superconducting devices; Superconducting films; Tunnel devices/effects; Bridge circuits; Conductivity; Dielectrics; Granular superconductors; Josephson junctions; Quantization; Sputtering; Substrates; Superconducting films; Superconducting thin films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1064947
Filename :
1064947
Link To Document :
