DocumentCode
1023446
Title
Silicon microcavities fabricated with a new technique
Author
Tenerz, L. ; Hök, B.
Author_Institution
Institute of Technology University of Uppsala, Electronics Department, Uppsala, Sweden
Volume
22
Issue
11
fYear
1986
Firstpage
615
Lastpage
616
Abstract
A new fabrication technique for silicon microcavities is described. The technique makes use of lithographic patterning and etching techniques, high-temperature bonding between hydrated surfaces and selective etching. Cavities with dimensions 100 × 250 × 12 ¿m and with a confining membrane consisting of a 1 ¿m-thick SiO2, film are demonstrated. The technique is potentially totally IC-compatible and can be used to realise a variety of sensor and actuator structures.
Keywords
electric sensing devices; elemental semiconductors; etching; integrated circuit technology; semiconductor technology; silicon; IC-compatible; Si microcavity fabrication; SiO2 film; actuator structures; confining membrane; etching techniques; fabrication technique; high-temperature bonding between hydrated surfaces; lithographic patterning; selective etching; semiconductors; sensor structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860418
Filename
4256615
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