Title :
Silicon microcavities fabricated with a new technique
Author :
Tenerz, L. ; Hök, B.
Author_Institution :
Institute of Technology University of Uppsala, Electronics Department, Uppsala, Sweden
Abstract :
A new fabrication technique for silicon microcavities is described. The technique makes use of lithographic patterning and etching techniques, high-temperature bonding between hydrated surfaces and selective etching. Cavities with dimensions 100 × 250 × 12 ¿m and with a confining membrane consisting of a 1 ¿m-thick SiO2, film are demonstrated. The technique is potentially totally IC-compatible and can be used to realise a variety of sensor and actuator structures.
Keywords :
electric sensing devices; elemental semiconductors; etching; integrated circuit technology; semiconductor technology; silicon; IC-compatible; Si microcavity fabrication; SiO2 film; actuator structures; confining membrane; etching techniques; fabrication technique; high-temperature bonding between hydrated surfaces; lithographic patterning; selective etching; semiconductors; sensor structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860418
