Title :
Low-parasitic, planar Schottky diodes for millimeter-wave integrated circuits
Author :
Archer, John W. ; Batchelor, Robert A. ; Smith, C.J.
Author_Institution :
Div. of Radiophys., CSIRO, Epping, NSW, Australia
fDate :
1/1/1990 12:00:00 AM
Abstract :
The design and fabrication of air-bridged, ultra-low-capacitance Schottky barrier diodes are described. Mott diodes, for mixer applications, and varactor diodes, for use in frequency multipliers, have been produced simultaneously on epitaxial wafers grown by molecular beam epitaxy. Typical mixer diodes have a nominal anode contact area of 4 μm2 and exhibit a total zero-bias capacitance of 4.0-4.5 fF (including a parasitic capacitance of approximately 1.0 fF) and a series resistance of 6-8 Ω. Diode chips have been incorporated in hybrid integrated circuit (MIC) mixers for 33-50 GHz and 75-110 GHz and an MIC frequency tripler for 90-140 GHz. Fully monolithic (MMIC) subharmonically pumped mixers for 75-110 GHz have also been fabricated and tested
Keywords :
MMIC; Schottky-barrier diodes; frequency multipliers; hybrid integrated circuits; microwave integrated circuits; mixers (circuits); solid-state microwave devices; varactors; 1 fF; 33 to 140 GHz; 4 to 4.5 fF; 6 to 8 ohm; EHF; MBE grown wafers; MIC frequency tripler; MM-wave ICs; MMIC; Mott diodes; air-bridged; epitaxial wafers; fabrication; frequency multipliers; hybrid integrated circuit; low parasitic diodes; microwave devices; millimeter-wave integrated circuits; mixer applications; molecular beam epitaxy; monolithic IC; planar Schottky diodes; series resistance; subharmonically pumped mixers; ultra-low-capacitance; varactor diodes; zero-bias capacitance; Anodes; Contact resistance; Fabrication; Frequency; Microwave integrated circuits; Molecular beam epitaxial growth; Parasitic capacitance; Schottky barriers; Schottky diodes; Varactors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
