DocumentCode :
1023531
Title :
Temperature Effects on Breakdown Characteristics of High- \\kappa Gate Dielectrics With Metal Gates
Author :
Rahim, Nilufa ; Misra, Durgamadhab
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ
Volume :
8
Issue :
4
fYear :
2008
Firstpage :
689
Lastpage :
693
Abstract :
In this paper, the temperature dependence of time-dependent dielectric breakdown (BD) and stress-induced leakage current (SILC) of high-kappa and interfacial layers (ILs) are studied separately and in a gate stack with metal gates as the BD mechanisms of these layers are different at higher temperatures than at room temperature. As observed from the low voltage SILC, the IL initiates the gate stack BD process at elevated temperature, which is followed by the high-kappa layer. Activation energy extracted from Weibulll distribution of time-to-BD (T BD) data from high-kappa layer further suggests that the gate stack BD occurs when high- kappa layer ultimately breaks down.
Keywords :
Weibull distribution; dielectric materials; electric breakdown; leakage currents; Weibulll distribution; breakdown characteristics; high-kappa gate dielectrics; low voltage SILC; metal gates; stress-induced leakage current; temperature effects; Data mining; Dielectric breakdown; Dielectric substrates; Electric breakdown; Hafnium oxide; Leakage current; Low voltage; Nonhomogeneous media; Stress; Temperature dependence; High-$kappa$ dielectric; Weibull distribution; stress-induced leakage current (SILC); time-dependent dielectric breakdown (TDDB);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2008.2005675
Filename :
4700825
Link To Document :
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