Title :
Temperature Effects on Breakdown Characteristics of High-
Gate Dielectrics With Metal Gates
Author :
Rahim, Nilufa ; Misra, Durgamadhab
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ
Abstract :
In this paper, the temperature dependence of time-dependent dielectric breakdown (BD) and stress-induced leakage current (SILC) of high-kappa and interfacial layers (ILs) are studied separately and in a gate stack with metal gates as the BD mechanisms of these layers are different at higher temperatures than at room temperature. As observed from the low voltage SILC, the IL initiates the gate stack BD process at elevated temperature, which is followed by the high-kappa layer. Activation energy extracted from Weibulll distribution of time-to-BD (T BD) data from high-kappa layer further suggests that the gate stack BD occurs when high- kappa layer ultimately breaks down.
Keywords :
Weibull distribution; dielectric materials; electric breakdown; leakage currents; Weibulll distribution; breakdown characteristics; high-kappa gate dielectrics; low voltage SILC; metal gates; stress-induced leakage current; temperature effects; Data mining; Dielectric breakdown; Dielectric substrates; Electric breakdown; Hafnium oxide; Leakage current; Low voltage; Nonhomogeneous media; Stress; Temperature dependence; High-$kappa$ dielectric; Weibull distribution; stress-induced leakage current (SILC); time-dependent dielectric breakdown (TDDB);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2008.2005675