DocumentCode :
1023546
Title :
Generation currents, noise and auger suppression in intrinsic diodes
Author :
White, Amanda M. ; Humphreys, R.G.
Author_Institution :
Royal Signals & Radar Establishment, Great Malvern, UK
Volume :
22
Issue :
12
fYear :
1986
Firstpage :
625
Lastpage :
626
Abstract :
The total diffusion-limited current and shot noise in intrinsic diodes do not depend explicitly on the detailed forms of the individual generation processes, but only on the current and noise of each process acting in isolation. Auger-like processes are relatively suppressed in high reverse bias.
Keywords :
electron device noise; semiconductor device models; semiconductor diodes; Auger suppression; diffusion-limited current; generation currents; generation processes; high reverse bias; intrinsic diodes; models; noise suppression; shot noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860428
Filename :
4256626
Link To Document :
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