• DocumentCode
    1023565
  • Title

    Optimisation of spacer layer thickness in n-AlxGa1-xAs/p+-GaAs heterojunction diodes grown by molecular beam epitaxy

  • Author

    Khamsehpour, B. ; Singer, K.E. ; van den Berg, J.A. ; Vickerman, J.C.

  • Author_Institution
    University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
  • Volume
    22
  • Issue
    12
  • fYear
    1986
  • Firstpage
    627
  • Lastpage
    629
  • Abstract
    The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-AlxGa1-xAs/p+-GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; Be migration; MBE-grown n-AlxGa1-xAs/ p+-GaAs diodes; current/voltage measurements; dynamic secondary ion mass spectrometry; electroluminescence; heterojunction diodes; heterojunction interface; optimisation; spacer layer thickness; undoped GaAs spacer layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860430
  • Filename
    4256628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023565