Title :
60 GHz BARITT diodes as self-oscillating mixers
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
The fabrication of Pt np+ silicon baritt diodes for V-band frequencies is described. An oscillating output power of 1 mW at 60 GHz could be attained. The diodes were investigated as self-oscillating mixers in Doppler-radar and local-oscillator applications. A conversion gain of 26 dB and a minimum detectable signal of ¿160 dBm (1 Hz bandwidth) could be measured near the carrier.
Keywords :
BARITT diodes; elemental semiconductors; microwave oscillators; mixers (circuits); silicon; 60 GHz baritt diodes; BARITT diodes; Doppler-radar; EHF; MM-wave diodes; Si; V-band; conversion gain; fabrication; local-oscillator applications; minimum detectable signal; oscillating output power; self-oscillating mixers; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860431
