• DocumentCode
    1023599
  • Title

    Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)

  • Author

    Reddi, V.G.K. ; Sah, C.T.

  • Author_Institution
    Fairchild Camera and Instrument Corp., Palo Alto, Calif.
  • Volume
    12
  • Issue
    3
  • fYear
    1965
  • fDate
    3/1/1965 12:00:00 AM
  • Firstpage
    139
  • Lastpage
    141
  • Abstract
    A detailed analysis is performed yielding source to drain resistance of MOS transistors in the saturation region. The analysis is based on a depletion model of the pinched-off region of the channel. Good agreement is found between theory and experimental results obtained on N -channel silicon MOS transistors (channel length ∼5 µ).
  • Keywords
    Area measurement; Capacitance measurement; Charge measurement; Current measurement; Density measurement; Electrons; MOSFETs; Q measurement; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1965.15469
  • Filename
    1473933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023599