DocumentCode :
1023599
Title :
Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)
Author :
Reddi, V.G.K. ; Sah, C.T.
Author_Institution :
Fairchild Camera and Instrument Corp., Palo Alto, Calif.
Volume :
12
Issue :
3
fYear :
1965
fDate :
3/1/1965 12:00:00 AM
Firstpage :
139
Lastpage :
141
Abstract :
A detailed analysis is performed yielding source to drain resistance of MOS transistors in the saturation region. The analysis is based on a depletion model of the pinched-off region of the channel. Good agreement is found between theory and experimental results obtained on 
-channel silicon MOS transistors (channel length ∼5 µ).
-channel silicon MOS transistors (channel length ∼5 µ).Keywords :
Area measurement; Capacitance measurement; Charge measurement; Current measurement; Density measurement; Electrons; MOSFETs; Q measurement; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1965.15469
Filename :
1473933
Link To Document :
