Title :
Effect of Au:Ge thickness on ohmic contacts to GaAs
Author :
L¿¿nnum, F. ; Johannessen, J.S.
Author_Institution :
ELAB, Trondheim, Norway
Abstract :
The GaAs/Au:Ge/Ni system has been studied at ELAB by varying the metal thicknesses and the temperature/time alloying profile. The results of the study suggest that there exists an optimal thickness of the metallisation and alloying time with respect to contact resistivity, for given ion implantation parameters.
Keywords :
III-V semiconductors; gallium arsenide; gold; metallisation; ohmic contacts; semiconductor technology; Au:Ge thickness; ELAB; GaAs/Au:Ge/Ni system; alloying time; contact resistivity; ion implantation; metal thicknesses; metallisation; ohmic contacts to GaAs; optimal thickness; semiconductors; temperature/time alloying profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860433
