• DocumentCode
    1023601
  • Title

    Effect of Au:Ge thickness on ohmic contacts to GaAs

  • Author

    L¿¿nnum, F. ; Johannessen, J.S.

  • Author_Institution
    ELAB, Trondheim, Norway
  • Volume
    22
  • Issue
    12
  • fYear
    1986
  • Firstpage
    632
  • Lastpage
    633
  • Abstract
    The GaAs/Au:Ge/Ni system has been studied at ELAB by varying the metal thicknesses and the temperature/time alloying profile. The results of the study suggest that there exists an optimal thickness of the metallisation and alloying time with respect to contact resistivity, for given ion implantation parameters.
  • Keywords
    III-V semiconductors; gallium arsenide; gold; metallisation; ohmic contacts; semiconductor technology; Au:Ge thickness; ELAB; GaAs/Au:Ge/Ni system; alloying time; contact resistivity; ion implantation; metal thicknesses; metallisation; ohmic contacts to GaAs; optimal thickness; semiconductors; temperature/time alloying profile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860433
  • Filename
    4256631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023601