Title :
Millimetre-waveguide-mounted InGaAs photodetectors
Author :
Bowers, John E. ; Burrus, C.A. ; Mitschke, Fedor
Author_Institution :
AT&T Bell Laboratories, Holmdel Laboratories, Holmdel, USA
Abstract :
We describe the design and characteristics of InGaAs PIN photodetectors mounted in microwave waveguides for use in transmission of millimetre-wave modulation signals on optical carriers. For an experimental device operating to 60 GHz (5 mm wavelength), we show the wavelength dependence of responsivity, the spatial uniformity of response and the bias dependence of modulation bandwidth.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fibres; optical links; photodiodes; EHF; InGaAs PIN photodetectors; MM-wave waveguide mounted photodetectors; bias dependence of modulation bandwidth; characteristics; design; experimental device; frequency 60 Hz; optical carriers; photodiodes; semiconductors; spatial uniformity of response; transmission of millimetre-wave modulation signals; wavelength dependence of responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860434
