Title :
Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector
Author :
Couch, N.R. ; Parker, D.G. ; Kelly, Michael J. ; Kerr, T.M.
Author_Institution :
GEC Research Limited, Hirst Research Centre, Wembley, UK
Abstract :
Preliminary measurements of the photoresponse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice are presented. Very low reverse-bias dark currents (<6×10¿8 A/cm2 at 3 V) are measured, while still retaining the speed and spectral response of a conventional GaAs PIN diode. The ¿3 dB bandwidth is found to be greater than 1 GHz, and the responsivity is 0.1 A/W.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photodiodes; semiconductor superlattices; GaAs p- n junction; asymmetric GaAs/AlAs superlattice; bandwidth; graded superlattice; measurements; photodiodes; photoresponse; responsivity; reverse-bias dark currents; semiconductors; spectral response; speed; superlattice PIN photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860436
