• DocumentCode
    1023682
  • Title

    Synthesis of MoN and RuN by active nitrogen sputtering

  • Author

    Ihara, H. ; Terada, N. ; Senzaki, K. ; Hirabayashi, M. ; Kimura, Y. ; Uzuka, R. ; Kawashima, F. ; Akimoto, M. ; Kezuka, H.

  • Author_Institution
    Electrochemical Laboratory, Sakura-mura, Niihari-gun, Ibaraki, Japan
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    1011
  • Lastpage
    1013
  • Abstract
    MoN films with B1 and hexagonal phases were prepared by active nitrogen sputtering with the aid of activated nitrogen species. High-Tc MoN films (above 14 K) were synthesized by NO sputtering gas which is favorable to produce active nitrogen atoms. Tc of B1 and hexagonal mixed-phase films was higher than that of each single phase film. RuNxfilms which consist of B1-like RuN and hexagonal Ru had Tcof 9.1 K. High-pressure-annealed film attained the highest Tc of 16.4 K among the Mo-N system for a B1 and hexagonal mixed-phase. Ru-N films (high-pressure-annealed) had Tc of 10.1 K.
  • Keywords
    Molybdenum materials/devices; Superconducting films; Atomic measurements; Bonding; Chemicals; Degradation; Gases; Lattices; Magnetic confinement; Nitrogen; Sputtering; Superconducting magnets;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1064969
  • Filename
    1064969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023682