Synthesis of MoN and RuN by active nitrogen sputtering

MoN films with B1 and hexagonal phases were prepared by active nitrogen sputtering with the aid of activated nitrogen species. High-Tc MoN films (above 14 K) were synthesized by NO sputtering gas which is favorable to produce active nitrogen atoms. Tc of B1 and hexagonal mixed-phase films was higher than that of each single phase film. RuNxfilms which consist of B1-like RuN and hexagonal Ru had Tcof 9.1 K. High-pressure-annealed film attained the highest Tc of 16.4 K among the Mo-N system for a B1 and hexagonal mixed-phase. Ru-N films (high-pressure-annealed) had Tc of 10.1 K.