Title :
CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology
Author :
Choi, S. ; Lee, B. ; Kim, T. ; Yang, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
fDate :
6/24/2004 12:00:00 AM
Abstract :
A new CML-type monostable/bistable logic element IC is fabricated using monolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs heterojunction bipolar transistors (HBTs). The D-flip-flop function of the fabricated circuit is confirmed up to 20 Gbit/s at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications.
Keywords :
current-mode logic; flip-flops; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated logic circuits; resonant tunnelling diodes; 293 to 298 K; D flip-flop; IC; InP based monolithic RTD/HBT technology; InP-InGaAs; InP/InGaAs heterojunction bipolar transistors; MOBILE; current mode logic type monostable bistable logic element; high-speed logic applications; monolithically integrated resonant tunnelling diodes; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040540
