Title :
Measurement of real-time digital signals in a silicon bipolar junction transistor using a noninvasive optical probe
Author :
Heinrich, H.K. ; Hemenway, B.R. ; McGroddy, K.A. ; Bloom, D.M.
Author_Institution :
Stanford University, E. L. Ginzton Laboratory, Stanford, USA
Abstract :
We report optical charge sensing of real-time 0.8 V digital signals in a silicon bipolar transistor in a 20 MHz bandwidth using a 1.3 ¿m semiconductor laser, and in a 100 MHz bandwidth using a 1.3 ¿m Nd:YAG laser. The probe is noninvasive, inducing a transistor base current of less than 10 nA.
Keywords :
bipolar transistors; electro-optical effects; elemental semiconductors; silicon; voltage measurement; Nd:YAG laser; Si bipolar transistor; bandwidth; digital signals measurement; laser wavelength 1.3 micron; noninvasive optical probe; optical charge sensing; real-time 0.8 V digital signals; voltage measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860445
