• DocumentCode
    1023765
  • Title

    Four-terminal field-effect transistors

  • Author

    Cobbold, R.S.C. ; Trofimenkoff, F.N.

  • Author_Institution
    University of Saskatchewan, Saskatoon, Canada
  • Volume
    12
  • Issue
    5
  • fYear
    1965
  • fDate
    5/1/1965 12:00:00 AM
  • Firstpage
    246
  • Lastpage
    247
  • Abstract
    A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF.
  • Keywords
    Doping profiles; Electron devices; Equations; FETs; Frequency; Impurities; Silicon devices; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1965.15488
  • Filename
    1473952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023765