• DocumentCode
    1023795
  • Title

    Processing of all-NbN tunnel junction series arrays

  • Author

    Blaugher, R.D. ; Przybysz, John X. ; Talvacchio, J. ; Buttyan, J.

  • Author_Institution
    Westinghouse R&D Center, Pittsburgh, Pennsylvania
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    673
  • Lastpage
    675
  • Abstract
    The processing of an all-NbN tunnel junction with an aluminum oxide barrier system is reported. A NbN/Al2O3/NbN trilayer was deposited by dc magnetron sputtering with the oxide barrier formed by ion beam oxidation. Individual junctions and series arrays were patterned using reactive ion etching and conventional photolithography, 100 junction (10 × 10 μm2) series arrays have been demonstrated with good tunneling Characteristics showing low leakage (Vm> 20) and acceptable currest densities.
  • Keywords
    Josephson radiation in superconductor/insulator superlattices; Tunnel devices/effects; Argon; Circuits; Electrodes; Josephson junctions; Lithography; Oxidation; Sputter etching; Sputtering; Superconducting magnets; Superconducting materials;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1064979
  • Filename
    1064979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023795