DocumentCode :
1023795
Title :
Processing of all-NbN tunnel junction series arrays
Author :
Blaugher, R.D. ; Przybysz, John X. ; Talvacchio, J. ; Buttyan, J.
Author_Institution :
Westinghouse R&D Center, Pittsburgh, Pennsylvania
Volume :
23
Issue :
2
fYear :
1987
fDate :
3/1/1987 12:00:00 AM
Firstpage :
673
Lastpage :
675
Abstract :
The processing of an all-NbN tunnel junction with an aluminum oxide barrier system is reported. A NbN/Al2O3/NbN trilayer was deposited by dc magnetron sputtering with the oxide barrier formed by ion beam oxidation. Individual junctions and series arrays were patterned using reactive ion etching and conventional photolithography, 100 junction (10 × 10 μm2) series arrays have been demonstrated with good tunneling Characteristics showing low leakage (Vm> 20) and acceptable currest densities.
Keywords :
Josephson radiation in superconductor/insulator superlattices; Tunnel devices/effects; Argon; Circuits; Electrodes; Josephson junctions; Lithography; Oxidation; Sputter etching; Sputtering; Superconducting magnets; Superconducting materials;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1064979
Filename :
1064979
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1023795
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