DocumentCode :
1023892
Title :
Polarisation-switching-induced resistance change in ferroelectric Mg-doped LiNbO3 single crystals
Author :
Mizuuchi, K. ; Morikawa, A. ; Sugita, T. ; Yamamoto, K.
Author_Institution :
Storage Media Syst. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume :
40
Issue :
13
fYear :
2004
fDate :
6/24/2004 12:00:00 AM
Firstpage :
819
Lastpage :
820
Abstract :
Reversible resistance change at room temperature by polarisation switching is reported in ferroelectric single crystals. Resistance switching up to six orders of magnitude in Mg-doped LiNbO3 was found. The resistance change is caused by the polarisation switching and increases with Mg concentration. Based on these results, continuous switching properties and memory behaviours were demonstrated.
Keywords :
dielectric polarisation; doping profiles; ferroelectric materials; ferroelectric storage; ferroelectric switching; lithium compounds; magnesium; 293 to 298 K; LiNbO3:Mg; Mg concentration; continuous switching properties; ferroelectric Mg-doped LiNbO3 single crystals; memory behaviours; polarisation-switching-induced resistance change; reversible resistance change; room temperature;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20040515
Filename :
1309740
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1023892
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