Title :
Precisely calibrated coaxial-to-microstrip transitions yield improved performance in GaAs FET characterization
Author :
Kompa, Günter ; Schlechtweg, Michael ; van Raay, Friedbert
Author_Institution :
Dept. of High Frequency Eng., Kassel Univ., West Germany
fDate :
1/1/1990 12:00:00 AM
Abstract :
An approach for calibrating coaxial-to-microstrip transitions up to 26.5 GHz with high precision is presented. An ideal through, noncritical open, noncritical short and surface absorber are used as microstrip standards for the calibration. The calibration measurement and an approach for extracting the scattering parameters of the transitions are described. Error-corrected results on broadband measurements of the scattering coefficients of packaged FETs in a hybrid circuit configuration are given
Keywords :
III-V semiconductors; S-parameters; calibration; field effect transistors; gallium arsenide; measurement errors; microwave measurement; semiconductor device testing; solid-state microwave devices; strip line components; test equipment; 26.5 GHz; FET characterization; GaAs; SHF; broadband measurements; calibration measurement; coaxial-to-microstrip transitions; error parameters extraction; hybrid circuit configuration; ideal through; microstrip standards; microstrip test fixture; microwave transistors; noncritical open; noncritical short; packaged FETs; scattering coefficients; scattering parameters; surface absorber; Calibration; Coaxial components; Data mining; Design automation; FETs; Gallium arsenide; Microstrip; Packaging; Scattering parameters; System testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
