Title :
Modified Fukui model for high-frequency MESFETs
Author :
Oxley, C.H. ; Holden, A.J.
Author_Institution :
Plessey Research (Caswell) Ltd., Towcester, UK
Abstract :
The letter will describe a modified form of the Fukui noise model to describe the high-frequency noise performance of MESFETs.
Keywords :
Schottky gate field effect transistors; electron device noise; semiconductor device models; solid-state microwave devices; Fukui noise model; MESFETs; MM-wave frequency range; high-frequency noise performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860472
