• DocumentCode
    1023960
  • Title

    Demonstration of 1.51μm inas/inp(3 1 1)B quantum dot single-mode laser operating under continuous wave

  • Author

    Moreau, G. ; Merghem, K. ; Martinez, A. ; Bouchoule, S. ; Ramdane, A. ; Grillot, F. ; Piron, R. ; Dehease, O. ; Homeyer, E. ; Tavernier, K. ; Loualiche, S. ; Berdaguer, P. ; Pommerau, F.

  • Author_Institution
    Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
  • Volume
    1
  • Issue
    6
  • fYear
    2007
  • fDate
    12/1/2007 12:00:00 AM
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    The achievement of a 1.51 mum InAs/InP(3 11)B quantum dot (QD) single-mode Fabry-Perot laser operating under continuous wave at room temperature is reported. A threshold current of 80 mA associated with a 0.12 W/A external efficiency is reported for as-cleaved device at room temperature. The maximum output power, the gain peak wavelength at threshold and the full width at half maximum of the spectral gain are 5 mW, 1512 nm and 60 nm, respectively. Although these performances must be improved in the future, these results constitute to our knowledge the state-of-the-art on InP(3 1 1)B substrate. These results are of great interest since QD-based lasers are expected to play a major role in the next generation telecommunication networks as low-cost devices.
  • Keywords
    Fabry-Perot resonators; indium compounds; semiconductor lasers; semiconductor quantum dots; InAs-InPB; continuous wave; current 80 mA; power 5 mW; quantum dot single mode laser; room temperature; single mode Fabry Perot laser; wavelength 1.51 mum; wavelength 1512 nm; wavelength 60 nm;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IET
  • Publisher
    iet
  • ISSN
    1751-8768
  • Type

    jour

  • DOI
    10.1049/iet-opt:20070037
  • Filename
    4415914