DocumentCode
1023979
Title
InP-based double-heterostructure phototransistors with 135 GHz optical-gain cutoff frequency
Author
Leven, A. ; Houtsma, V. ; Kopf, R. ; Baeyens, Y. ; Chen, Y.K.
Author_Institution
Bell Labs. Lucent Technol., Murray Hill, NJ, USA
Volume
40
Issue
13
fYear
2004
fDate
6/24/2004 12:00:00 AM
Firstpage
833
Lastpage
834
Abstract
A high-speed layer and process compatible phototransistor based on the authors´ InP-based double-heterostructure bipolar transistor technology is presented. By using only the base and a thin base-collector spacer as absorption layer, slow drifting holes in the collector layer are avoided. This results in record optical-gain cutoff frequencies of up to 135 GHz at the expense of intrinsic photodiode responsivity in a top-illuminated configuration.
Keywords
III-V semiconductors; indium compounds; integrated optoelectronics; photodiodes; phototransistors; 135 GHz; InP; InP based double heterostructure phototransistors; bipolar transistor; collector layer; drifting holes; intrinsic photodiode; optical gain cutoff frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040522
Filename
1309749
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