Title :
Effect of nonlinear gain on single-frequency behaviour of semiconductor lasers
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The effect of nonlinear gain on the single-frequency behaviour of semiconductor lasers is analysed using a two-mode rate-equation model. We find that the asymmetric nature of the nonlinear gain is responsible for bringing the sidemode above threshold when the power in the main mode exceeds a critical level. We obtain an analytic expression for the critical current density at which the sidemode reaches threshold and apply it to discuss the single-frequency range of distributed-feedback semiconductor lasers.
Keywords :
current density; distributed feedback lasers; laser modes; laser theory; semiconductor junction lasers; critical current density; distributed-feedback semiconductor lasers; main mode; nonlinear gain; semiconductor lasers; sidemode; single-frequency behaviour; two-mode rate-equation model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860476