DocumentCode :
1023994
Title :
Effect of nonlinear gain on single-frequency behaviour of semiconductor lasers
Author :
Agarwal, G.P.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Volume :
22
Issue :
13
fYear :
1986
Firstpage :
696
Lastpage :
697
Abstract :
The effect of nonlinear gain on the single-frequency behaviour of semiconductor lasers is analysed using a two-mode rate-equation model. We find that the asymmetric nature of the nonlinear gain is responsible for bringing the sidemode above threshold when the power in the main mode exceeds a critical level. We obtain an analytic expression for the critical current density at which the sidemode reaches threshold and apply it to discuss the single-frequency range of distributed-feedback semiconductor lasers.
Keywords :
current density; distributed feedback lasers; laser modes; laser theory; semiconductor junction lasers; critical current density; distributed-feedback semiconductor lasers; main mode; nonlinear gain; semiconductor lasers; sidemode; single-frequency behaviour; two-mode rate-equation model;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860476
Filename :
4256676
Link To Document :
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