Title :
SpectreHDL as tool for noise analysis of poly-Si TFT circuits
Author :
Rankov, A. ; Rodriguez-Villegas, E. ; Lee, M.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
fDate :
6/24/2004 12:00:00 AM
Abstract :
Because of no general noise model in poly-Si TFT technologies, a noise analysis of poly-Si TFT circuits is currently unavailable in any circuit simulator. Therefore it is shown how to make use of the SpectreHDL language for this purpose once the device noise model is extracted from measurement results.
Keywords :
circuit noise; circuit simulation; current density; elemental semiconductors; flicker noise; hardware description languages; silicon; thermal noise; transistor circuits; Si; Spectre high-level description language; SpectreHDL; drain current spectral density; noise analysis; poly-Si thin film transistors circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040504
