• DocumentCode
    1024058
  • Title

    Emission of HF radiation in n+n(x)n+ GaAs devices under crossed electric and magnetic fields

  • Author

    Tiwari, S.C.

  • Author_Institution
    Banaras Hindu University, Applied Physics Section, Institute of Technology, Varanasi, India
  • Volume
    22
  • Issue
    13
  • fYear
    1986
  • Firstpage
    706
  • Lastpage
    707
  • Abstract
    Physical arguments are presented to investigate the possibility of altering Landau levels by varying the doping density in the active n-layer in sandwiched n+n(x)n+ structures. Energy eigenvalues obtained from the solution of the Schrödinger equation provide the frequency range of possible radiation emission.
  • Keywords
    III-V semiconductors; Landau levels; gallium arsenide; high-frequency effects; microwave generation; semiconductor junctions; GaAs devices; HF radiation emission; III-V semiconductor; Landau levels; Schrodinger equation; active n-layer; crossed electric and magnetic fields; doping density; energy eigenvalues; harmonic oscillator; microwave generation; n+ n(x) n+ structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860483
  • Filename
    4256685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024058