InGaAs/InAlAs SCH-MQW lasers with superlattice optical confinement layers grown by MBE

Author

Kawamura, Y. ; Asai, H. ; Sakai, Y. ; Kotaka, I. ; Naganuma, M.

Author_Institution

Opto-Electron. Lab., NTT, Kanagawa, Japan

Volume

2

Issue

1

fYear

1990

Firstpage

1

Lastpage

2

Abstract

InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are discussed. Room-temperature operation with a low threshold current density of 1.7 kA/cm/sup 2/ at 1.537 mu m wavelength is obtained for these lasers.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; semiconductor superlattices; 1.537 micron; III-V semiconductor; InGaAs-InAlAs; InGaAs/InAlAs SCH-MQW lasers; MBE; low threshold current density; molecular beam epitaxy; multiple-quantum-well; room temperature operation; separate-confinement-heterostructure; superlattice optical confinement layers; High speed optical techniques; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Optical buffering; Optical refraction; Optical superlattices; Optical variables control; Quantum well devices; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.47022

Filename

47022