Title :
Theory of hot electron transfer in gallium arsenide
Author :
Butcher, P.N. ; Fawcett, W. ; Hilsum, C.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Diodes; Electrons; Gallium arsenide; Gunn devices; III-V semiconductor materials; Impurities; Laboratories; Microwave devices; Radar scattering; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15542
