DocumentCode

1024350

Title

High electric field and pressure effects in n-CdTe, n-InAs, and N-InSb

Author

Foyt, A.G. ; McWhorter, A.L. ; Paul, W.

Volume

12

Issue

9

fYear

1965

fDate

9/1/1965 12:00:00 AM

Firstpage

503

Lastpage

503

Keywords

Diodes; Electrons; Gallium arsenide; Gunn devices; III-V semiconductor materials; Laboratories; Microwave devices; Pressure effects; Radar scattering; Telephony;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1965.15544

Filename

1474008