Title :
Monolithic integration of GaAs photoconductors with a field-effect transistor
Author :
Lam, D.K.W. ; Syrett, B.A. ; Stubbs, M.G.
Author_Institution :
Communication Research Centre, Department of Communications, Ottawa, Canada
Abstract :
A one-stage monolithic integration of a tandem pair of GaAs photoconductors (PCs) with a field-effect transistor (FET) is reported. The PC-FET exhibits a bandwidth in excess of 1 GHz and a gain of 6 dB at midband. A very low noise figure of ~3 dB in the FET is also achieved.
Keywords :
III-V semiconductors; integrated optoelectronics; monolithic integrated circuits; GaAs photoconductors; bandwidth; field-effect transistor; gain; noise figure; one-stage monolithic integration; tandem pair;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860518
