Title :
Transient effects in M-O-S structures induced by changes of temperature and of the ambient atmosphere
Author :
Lehovec, K. ; Ho, Paul ; Fedotowsky, L.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Atmosphere; Energy states; Equations; Laboratories; MOS devices; Oxidation; Silicon; Surface treatment; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15556
