Title :
Local charge influence on impurity diffusion in semiconductors
Author :
Buonomo, A. ; Di Bello, C.
Author_Institution :
UniversitÃ\xa0 di Salerno, Istituto di Ingegneria Elettronica, Salerno, Italy
Abstract :
The impurity diffusion in semiconductors has been simulated numerically by considering the local charge present in the semiconductor during the process. Numerical results demonstrate the validity limits of the diffusion model based on the well known charge neutrality approximation.
Keywords :
diffusion in solids; semiconductor doping; charge neutrality approximation; diffusion model; impurity diffusion; local charge; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860526
