• DocumentCode
    1024501
  • Title

    Local charge influence on impurity diffusion in semiconductors

  • Author

    Buonomo, A. ; Di Bello, C.

  • Author_Institution
    UniversitÃ\xa0 di Salerno, Istituto di Ingegneria Elettronica, Salerno, Italy
  • Volume
    22
  • Issue
    14
  • fYear
    1986
  • Firstpage
    765
  • Lastpage
    766
  • Abstract
    The impurity diffusion in semiconductors has been simulated numerically by considering the local charge present in the semiconductor during the process. Numerical results demonstrate the validity limits of the diffusion model based on the well known charge neutrality approximation.
  • Keywords
    diffusion in solids; semiconductor doping; charge neutrality approximation; diffusion model; impurity diffusion; local charge; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860526
  • Filename
    4256729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024501