DocumentCode
1024614
Title
Heterojunction field-effect transistor (HFET)
Author
Taylor, Graham W. ; Simmons, Jay G.
Author_Institution
AT&T Bell Laboratories, Holmdel, USA
Volume
22
Issue
15
fYear
1986
Firstpage
784
Lastpage
786
Abstract
A new form of FET is proposed for implementation in a heterojunction material system such as AlGaAs/GaAs. The conducting channel is an inversion channel formed at the heterojunction interface by the use of molecular beam epitaxy. Thresholds are controlled by ion implantation as in silicon technology.
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; p-n heterojunctions; HFET; MBE; conducting channel; heterojunction interface; heterojunction material system; inversion channel; ion implantation; molecular beam epitaxy; threshold control;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860538
Filename
4256742
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