Title :
Heterojunction field-effect transistor (HFET)
Author :
Taylor, Graham W. ; Simmons, Jay G.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
A new form of FET is proposed for implementation in a heterojunction material system such as AlGaAs/GaAs. The conducting channel is an inversion channel formed at the heterojunction interface by the use of molecular beam epitaxy. Thresholds are controlled by ion implantation as in silicon technology.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; p-n heterojunctions; HFET; MBE; conducting channel; heterojunction interface; heterojunction material system; inversion channel; ion implantation; molecular beam epitaxy; threshold control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860538
