• DocumentCode
    1024723
  • Title

    Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating

  • Author

    Burkhard, H. ; Kuphal, E. ; Dinges, H.W.

  • Author_Institution
    Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
  • Volume
    22
  • Issue
    15
  • fYear
    1986
  • Firstpage
    802
  • Lastpage
    803
  • Abstract
    Threshold currents of 1.52 μm InGaAsP/InPGaAsP/InP DFB lasers with second-order gratings have been reduced to 12 mA in single-longitudinal-mode operation. External differential efficiencies exceed 25%/feet with a λ/4 Si3N4 coating on the front facet.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; InGaAsP/InP MS-DFB lasers; second-order grating; semiconductors; single-longitudinal-mode operation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860550
  • Filename
    4256754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024723