Title :
Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating
Author :
Burkhard, H. ; Kuphal, E. ; Dinges, H.W.
Author_Institution :
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Abstract :
Threshold currents of 1.52 μm InGaAsP/InPGaAsP/InP DFB lasers with second-order gratings have been reduced to 12 mA in single-longitudinal-mode operation. External differential efficiencies exceed 25%/feet with a λ/4 Si3N4 coating on the front facet.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; InGaAsP/InP MS-DFB lasers; second-order grating; semiconductors; single-longitudinal-mode operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860550
