Title :
A resonant gate surface transistor with high-q bandpass properties
Author :
Nathanson, H.C. ; Wickstrom, R.A.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Electrodes; Electromagnetic heating; FETs; Frequency; Gaussian processes; Laboratories; Microwave devices; Plasma properties; Resonance; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15583
