DocumentCode
1024817
Title
Bipolar heterojunction transistor integrated circuits: design, modelling and characterisation
Author
Holden, A.J. ; Eddison, C.G. ; Metcalfe, J.G. ; Hayes, R.C.
Author_Institution
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Volume
22
Issue
15
fYear
1986
Firstpage
815
Lastpage
816
Abstract
Measured and modelled results are compared for bipolar heterojunction transistors (BHJTs) and integrated circuits. We describe a CAD package for the design of BHJTs and we report measured ECL ring oscillator gate delays of 50 ps. Divide-by-four circuits operate up to 1.6 GHz compared with a predicted value of 1.5 GHz.
Keywords
bipolar integrated circuits; bipolar transistors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; oscillators; semiconductor device models; BHJTs; CAD package; ECL ring oscillator gate delays; HJBT; bipolar heterojunction transistors; characterisation; design; divide by four circuits; integrated circuits; modelled results; modelling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860559
Filename
4256763
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