Title :
Effect of diffusion current on the device characteristics of insulated-gate field-effect transistors
fDate :
9/1/1965 12:00:00 AM
Keywords :
FETs; Gallium arsenide; Gold; Heterojunctions; Insulation; Laboratories; Lighting; Semiconductor diodes; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15593
