DocumentCode

1024835

Title

Influence of nonequilibrium carriers on the surface breakdown of N + P diodes and MOS-structures

Author

Schroen, W.

Volume

12

Issue

9

fYear

1965

fDate

9/1/1965 12:00:00 AM

Firstpage

509

Lastpage

509

Keywords

Conductivity; Electric breakdown; Gallium arsenide; Gold; Heterojunctions; Laboratories; Lighting; Semiconductor diodes; Semiconductor films; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1965.15595

Filename

1474059