Title :
Linear electro-optic effect in GexSi1-x/Si strained-layer superlattices
Author :
Friedman, L. ; Soref, Richard A.
Author_Institution :
Tufts University, Electro-Optics Technology Center, Medford, USA
Abstract :
The bond-charge model of Jha and Bloembergen has been extended to ordered, pseudodiamond GexSi1-x/Si super-lattices to calculate the Pockels coefficient and the second-order susceptibility of these structures. We find that the Pockels coefficient is approximately 1 × 10-12 m/V over the near-infra-red range.
Keywords :
Pockels effect; electro-optical devices; germanium alloys; integrated optics; optical modulation; phase modulation; semiconductor superlattices; silicon alloys; Pockels coefficient; bond-charge model; linear electrooptical effect; near IR; near-infrared range; pseudodiamond Ge/sub>xSi1-x/Si superlattices; second-order susceptibility; strained-layer superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860562
