DocumentCode
1024890
Title
Electrical characteristics of Ge-GaAs and Ge-Si p-n heterojunctions
Author
Donnelly, J.P. ; Feucht, D.L.
Volume
12
Issue
9
fYear
1965
fDate
9/1/1965 12:00:00 AM
Firstpage
511
Lastpage
511
Keywords
Current-voltage characteristics; Diodes; Doping; Electric variables; Forward contracts; Gallium arsenide; Heterojunctions; Semiconductor process modeling; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1965.15600
Filename
1474064
Link To Document