DocumentCode
1024937
Title
Si magnetic sensor composed of two combined pin diodes
Author
Kimura, Mizue ; Takahashi, Satoshi
Author_Institution
Tohoku Gakuin University, Department of Electrical Engineering, Tagajo, Japan
Volume
22
Issue
16
fYear
1986
Firstpage
830
Lastpage
832
Abstract
A novel highly sensitive Si magnetic sensor composed of two PIN diodes with a common n+-region is proposed, and the fundamental characteristics are shown. This magnetic sensor is operated in the double-injection states of both two PIN diodes, and may be regarded as an active magnetoresistance device which detects the resistance change of the main PIN diode due to application of the magnetic field.
Keywords
electric sensing devices; elemental semiconductors; magnetic field measurement; semiconductor diodes; silicon; PIN diodes; Si magnetic sensor; active magnetoresistance device; common n+-region; double-injection states; magnetic field;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860569
Filename
4256774
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