Title :
Si magnetic sensor composed of two combined pin diodes
Author :
Kimura, Mizue ; Takahashi, Satoshi
Author_Institution :
Tohoku Gakuin University, Department of Electrical Engineering, Tagajo, Japan
Abstract :
A novel highly sensitive Si magnetic sensor composed of two PIN diodes with a common n+-region is proposed, and the fundamental characteristics are shown. This magnetic sensor is operated in the double-injection states of both two PIN diodes, and may be regarded as an active magnetoresistance device which detects the resistance change of the main PIN diode due to application of the magnetic field.
Keywords :
electric sensing devices; elemental semiconductors; magnetic field measurement; semiconductor diodes; silicon; PIN diodes; Si magnetic sensor; active magnetoresistance device; common n+-region; double-injection states; magnetic field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860569
