Physical modeling of bipolar mode JFET for CAE/CAD simulation

Author

Busatto, Giovanni

Author_Institution

Dept. of Electron. Eng., Naples Univ., Italy

Volume

8

Issue

4

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

368

Lastpage

375

Abstract

A circuit model of a power bipolar JFET, based on a specific formulation of its charge control model,is presented. The circuit obtained accurately describes both unipolar and bipolar modes of operation of the device, and is presented in a form suitable to be incorporated in circuit CAD (computer-aided design) simulators. The model was developed on a physical basis, and its parameters can in principle be directly computed from geometrical and physical characteristics of the device. The author also presents the implementation of the model into the version 4.02 of PSPICE obtained by modifying a device subroutine

Keywords

SPICE; circuit CAD; digital simulation; junction gate field effect transistors; power transistors; semiconductor device models; CAE/CAD simulation; PSPICE version 4.02; bipolar mode JFET; charge control model; circuit CAD simulators; computer-aided design; physical modeling; power bipolar JFET; unipolar mode; Algorithms; Circuit simulation; Computational modeling; Computer aided engineering; Computer simulation; Design automation; JFET circuits; Physics computing; SPICE; Solid modeling;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.261006

Filename

261006