DocumentCode :
1024948
Title :
Automatic positioning of device electrodes using the scanning electron microscope
Author :
Wells, O.C. ; Everhart, T.E. ; Matta, R.K.
Author_Institution :
IBM Watson Research Labs., Yorktown Heights, N. Y.
Volume :
12
Issue :
10
fYear :
1965
fDate :
10/1/1965 12:00:00 AM
Firstpage :
556
Lastpage :
563
Abstract :
In current technology, the edge definition that can be achieved by the photoresist process is approximately ten times sharper than the registration accuracy that can be maintained over a workpiece of any reasonable size. A description is presented of an attempt to improve registration through feedback from the workpiece itself; the servo signal is generated by the photoresist-exposing radiation, a submicron-diameter electron beam. Using this technique, the gate electrode of a field-effect transistor (FET) has been automatically positioned relative to the channel.
Keywords :
Electrodes; Electron beams; Electron emission; Etching; FETs; Fabrication; Indexing; Resists; Scanning electron microscopy; Strips;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1965.15607
Filename :
1474071
Link To Document :
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